Search results for "Distribution theory and Monte Carlo studie"

showing 3 items of 3 documents

EFFECT OF A FLUCTUATING ELECTRIC FIELD ON ELECTRON SPIN DEPHASING TIME IN III–V SEMICONDUCTORS

2012

We investigate the electron spin dephasing in low n-doped GaAs semiconductor bulks driven by a correlated fluctuating electric field. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin relaxation times are computed through the D’yakonov–Perel process, which is the only relevant relaxation mechanism in zinc-blende semiconductors. The decay of initial spin polarization of conduction electrons is calculated for different values of field strength, noise intensity and noise correlation time. For values of noise correlation time compara…

Distribution theory and Monte Carlo studieHigh-field and nonlinear effectSpin relaxation and scatteringNoise processes and phenomenaSettore FIS/03 - Fisica Della Materia
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New insights into electron spin dynamics in the presence of correlated noise

2011

The changes of the spin depolarization length in zinc-blende semiconductors when an external component of correlated noise is added to a static driving electric field are analyzed for different values of field strength, noise amplitude and correlation time. Electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin depolarization is studied by examinating the decay of the initial spin polarization of the conduction electrons through the D'yakonov-Perel process, the only relevant relaxation mechanism in III-V crystals. Our results show that, f…

Field (physics)DephasingElectronsField strengthSpin relaxation and scatteringNoise processes and phenomenaSettore FIS/03 - Fisica Della MateriaMagneticsDistribution theory and Monte Carlo studieElectric fieldElectrochemistryScattering RadiationGeneral Materials ScienceCondensed Matter - Statistical MechanicsPhysicsCondensed matter physicsSpin polarizationChemistry PhysicalRelaxation (NMR)High-field and nonlinear effectCondensed Matter PhysicsSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)Condensed Matter - Other Condensed MatterAmplitudeCrystallizationMonte Carlo MethodNoise (radio)Journal of Physics: Condensed Matter
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Effect of a fluctuating electric field on electron spin dephasing in III-V semiconductors

2011

In the present work we investigate electron spin relaxation in low-doped n-type GaAs semiconductor bulks driven by a static electric field. The electron dynamics is simulated by a Monte Carlo procedure which keeps into account all the possible scattering phenomena of the hot electrons in the medium and includes the evolution of spin polarization. Spin relaxation lengths are computed through the D’yakonov-Perel process, which is the only relevant relaxation mechanism in zinc-blende semiconductors. Since semiconductor based devices are always imbedded into a noisy environment that can strongly affect their performance, the decay of initial spin polarization of conduction electrons is calculat…

Fluctuation phenomena random processes noise and Brownian motionSpin polarized transport in semiconductorDistribution theory and Monte Carlo studieSpin relaxation and scatteringSettore FIS/03 - Fisica Della Materia
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